EEPROM devices and methods of operating and fabricating the...

Details EEPROM devices and methods of operating and fabricating the... EEPROM devices and methods of operating and fabricating the...

2009-08-18

2011-11-01

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185260, C365S185270

Reexamination Certificate

active

08050091

ABSTRACT:
An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.

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Office Action dated Jun. 5, 2009 from Chinese Patent Office corresponding to Chinese application with English Translation.

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