EEPROM circuit voltage reference circuit and method for...

Details EEPROM circuit voltage reference circuit and method for... EEPROM circuit voltage reference circuit and method for...

2005-04-19

2005-04-19

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S185010, C323S284000

Reexamination Certificate

active

06882582

ABSTRACT:
A voltage reference circuit (40) is provided for producing a low temperature-coefficient analogue trim value. A pair of EEPROMs (50and60) are arranged such that the trim value is the difference between two EEPROM transistor threshold voltages. The substantially temperature dependent components of threshold voltage cancel out leaving only the substantially temperature independent trim value. Therefor the temperature coefficient of the voltage reference circuit (40) is negligible.

REFERENCES:
patent: 4559694 (1985-12-01), Yoh et al.
patent: 5319370 (1994-06-01), Signore
patent: 5430670 (1995-07-01), Rosenthal
patent: 5629891 (1997-05-01), LeMoncheck
patent: 5995413 (1999-11-01), Holzmann et al.
patent: 6026023 (2000-02-01), Tonda
patent: 6087813 (2000-07-01), Tobita
Carley, “Trimming Analog Circuits Using Floating-Gate Analog MOS Memory,” IEEE Journal of Solid-State Circuits, Dec. 24, 1989, No. 6; pp. 1569-1575.

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