Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-10
1998-06-02
Levy, Stuart S.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257316, H01L 2976, H01L 29788
Patent
active
057604363
ABSTRACT:
A flash EEPROM cell structure and a method for forming it. The method of forming the EEPROM cell includes the steps of: forming a plurality of trenches on a substrate, the trenches being filled with an insulating layer; forming bit lines between the trenches and on the substrate; forming an insulating layer on the bit lines; forming a floating gate, with at least one side of it contacting with the bit lines; and simultaneously forming a control gate and an erasing gate. The control gate and the erasing gate cross the bit lines and the floating gate. The erasing gate also extends over the trenches. The floating gate and the erasing gate extend down into the trenches.
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"A New Flash E.sup.2 PROM Cell Using Triple Polysilicon Technology," H. Masuoka, International Electron Devices Meeting 1984 Technical Digest, Dec. 1984, pp. 464-467.
Giordana Adriana
Levy Stuart S.
LG Semicon Co. Ltd.
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