EEPROM-backed FIFO memory

Static information storage and retrieval – Systems using particular element – Flip-flop

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365221, 365228, G11C 1140

Patent

active

053532481

ABSTRACT:
A first-in, first-out (FIFO) static random access memory (SRAM) device includes EEPROM cells which provide non-volatile backup capability. The sizing of each SRAM cell is such that its associated EEPROM cell is automatically programmed via the output of the SRAM cell. Upon power-up, the EEPROM cell restores the SRAM cell to the inverse of whatever state it was in prior to the most recent EEPROM programming (before a preceding power-down). This provides non-volatility to the SRAM without a significant increase in manufacturing costs or overhead.

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