Static information storage and retrieval – Read/write circuit – Erase
Patent
1991-09-20
1994-05-17
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Erase
365185, 36523004, G11C 1606, G11C 1134
Patent
active
053134273
ABSTRACT:
A nonvolatile memory has pairs of cells in which each cell includes a control gate, a floating gate and a source/drain diffusion. A first cell in each of the pairs is producible to have one value of floating-gate to diffusion capacitance. A second cell in each of the pairs is producible to have a second value of floating-gate to diffusion capacitance different from the first value. The memory includes a first circuit for applying a first erasing pulse to the control gates and the diffusions of the first cells of the pairs and includes a second circuit for applying a second erasing pulse to the control gates and the diffusions of the second cells of the pairs. The first erasing pulse is adjustable to have a different magnitude than the second erasing pulse in order to narrow the margin of erased threshold voltages and thereby compensate for misalignment.
REFERENCES:
patent: 4878101 (1989-10-01), Hsieh et al.
patent: 4912676 (1990-03-01), Paterson et al.
patent: 4996571 (1991-02-01), Rome et al.
patent: 5021847 (1991-06-01), Eitan et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5095344 (1992-03-01), Harari
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5168335 (1992-12-01), D'Arrigo et al.
patent: 5185718 (1993-02-01), Rinerson et al.
patent: 5191556 (1993-03-01), Radjy
McElroy David J.
Schreck John F.
Shah Pradeep L.
Donaldson Richard L.
Heiting Leo N.
Kessell Michael C.
LaRoche Eugene R.
Lindgren Theodore D.
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