EEPROM

Details EEPROM EEPROM

2006-11-27

2009-02-10

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S185240, C365S185090, C257SE21682, C257SE29129, C257SE29304, C257S314000, C257S315000

Reexamination Certificate

active

07489005

ABSTRACT:
An EEPROM having a nonvolatile memory cell is provided. The nonvolatile memory cell has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a gate electrode in common, the gate electrode being a floating gate electrically isolated from a surrounding circuitry. The first MOS transistor and the second MOS transistor are of a same conductivity type.

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Korean Office Action dated Apr. 18, 2008 with Partial English Translation.

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