Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-26
2006-12-26
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S079000
Reexamination Certificate
active
07154149
ABSTRACT:
This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the circuit substrate having two p-type substrates and one n-type substrate therein; a first ESD protection configuration, built-in the circuit substrate and including a first resistor, a first capacitor and a first diode that are connected in series and then engage a parallel connection with the LED, wherein the first diode has a p-node connected to an n-node of the LED; and a second ESD protection configuration, built-in the circuit substrate and including a second resistor, a second capacitor and a second diode that are connected in series and then engage a parallel connection with the LED and the first ESD protection configuration, wherein the second diode has a p-node connected to the p-node of the LED, whereby such a configuration absorbs and removes ESD induced upon human contact and prevents the LED from burning to effectively extend the lifespan of the LED.
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Hwang Rong-Yih
Tu Chuan-Cheng
Wu Jen-Chau
Yang Cheng-Chung
Epistar Corporation
Hsu Winston
Pham Long
LandOfFree
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