Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-13
1999-03-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257333, H01L 2979, H01L 2994, H01L 31062, H01L 31113
Patent
active
058834109
ABSTRACT:
The present invention discloses a power transistor disposed on a substrate. The power device includes a core cell area comprising a plurality of power transistor cells each having drain and a source. Each of the power transistor cells further having a polycrystalline silicon gate formed on the substrate as part of a polycrystalline silicon gate layer overlaying the substrate. The polycrystalline silicon gate layer includes a plurality of polycrystalline gate-layer-extension extending to gate contact areas for forming gate contacts with a contact metal disposed thereon. The power transistor further includes a plurality of contact-metal-resistant pad each includes a thick oxide pad disposed below the gate contact areas underneath the polycrystalline gate layer extension whereby the contact-metal resistant pads resists the contact metal from penetrating therethrough and short to the substrate disposed thereunder.
Hshieh Fwu-Iuan
Nim Danny Chi
So Koon Chong
Tsui Yan Man
Lin Bo-In
MegaMos Corporation
Meier Stephen D.
LandOfFree
Edge wrap-around protective extension for covering and protectin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Edge wrap-around protective extension for covering and protectin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Edge wrap-around protective extension for covering and protectin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-819902