Edge removal of silicon-on-insulator transfer wafer

Details Edge removal of silicon-on-insulator transfer wafer Edge removal of silicon-on-insulator transfer wafer

2011-05-31

2011-05-31

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C216S099000

Reexamination Certificate

active

07951718

ABSTRACT:
A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

REFERENCES:
patent: 4721548 (1988-01-01), Morimoto
patent: 5354715 (1994-10-01), Wang et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 5700179 (1997-12-01), Hasegawa et al.
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 5800725 (1998-09-01), Kato et al.
patent: 5821166 (1998-10-01), Hajime et al.
patent: 5854123 (1998-12-01), Sato et al.
patent: 5920764 (1999-07-01), Hanson et al.
patent: 5942445 (1999-08-01), Kato et al.
patent: 5951374 (1999-09-01), Kato et al.
patent: 5966620 (1999-10-01), Sakaguchi et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6010579 (2000-01-01), Henley et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6013567 (2000-01-01), Henley et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6048411 (2000-04-01), Henley et al.
patent: 6054363 (2000-04-01), Sakaguchi et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6155909 (2000-12-01), Henley et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6159825 (2000-12-01), Henley et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6200199 (2001-03-01), Gurusamy et al.
patent: 6221774 (2001-04-01), Malik
patent: 6246667 (2001-06-01), Ballintine et al.
patent: 6248667 (2001-06-01), Kim et al.
patent: 6276997 (2001-08-01), Li
patent: 6284628 (2001-09-01), Kuwahara et al.
patent: 6284629 (2001-09-01), Yokokawa et al.
patent: 6335264 (2002-01-01), Henley et al.
patent: 6337241 (2002-01-01), Aoki
patent: 6372609 (2002-04-01), Aga et al.
patent: 6376378 (2002-04-01), Chen et al.
patent: 6387809 (2002-05-01), Toyama
patent: 6426270 (2002-07-01), Sakaguchi et al.
patent: 6448152 (2002-09-01), Henley et al.
patent: 6458688 (2002-10-01), Wenski et al.
patent: 6468923 (2002-10-01), Yonehara et al.
patent: 6530826 (2003-03-01), Wenski et al.
patent: 6596610 (2003-07-01), Kuwabara et al.
patent: 6613676 (2003-09-01), Yonehara et al.
patent: 6872598 (2005-03-01), Liu
patent: 7022586 (2006-04-01), Maleville et al.
patent: 7402520 (2008-07-01), Donohoe et al.
patent: 7749908 (2010-07-01), Maleville et al.
patent: 2001/0029072 (2001-10-01), Kuwahara et al.
patent: 2001/0039101 (2001-11-01), Wenski
patent: 2002/0081823 (2002-06-01), Cheung et al.
patent: 2002/0164876 (2002-11-01), Walitzki et al.
patent: 2003/0092244 (2003-05-01), Oi et al.
patent: 2003/0219957 (2003-11-01), Kuwabara et al.
patent: 2004/0060906 (2004-04-01), Bachrach et al.
patent: 2004/0112866 (2004-06-01), Maleville et al.
patent: 2004/0195658 (2004-10-01), Nakayama et al.
patent: 2005/0070071 (2005-03-01), Henley et al.
patent: 2006/0027934 (2006-02-01), Edelstein et al.
patent: 2006/0115986 (2006-06-01), Donohoe et al.
patent: 2006/0141747 (2006-06-01), Henley et al.
patent: 2008/0124929 (2008-05-01), Okuda et al.
patent: 2008/0124930 (2008-05-01), Lim et al.
patent: 2008/0138987 (2008-06-01), Donohoe et al.
patent: 0 971 395 (2000-01-01), None
patent: 1156531 (2000-11-01), None
patent: 1 427 001 (2004-06-01), None
patent: 1427001 (2004-06-01), None
patent: 2794891 (2000-12-01), None
patent: 11297583 (1999-10-01), None
patent: 2005072070 (2005-03-01), None
patent: 2005072071 (2005-03-01), None
patent: WO 2004/010494 (2004-01-01), None
patent: WO 2007/007537 (2007-01-01), None
patent: WO 2008/007508 (2008-01-01), None
Partial European Search of EP Application No. 05257236, mailed Apr. 1, 2009, 6 pages total.
European Search of EP Application No. 08022217, mailed Apr. 1, 2009, 7 pages total.
Notice of Allowance for U.S. Appl. No. 10/998,289 mailed on Apr. 25, 2008; 9 pages.
Notice of Allowance for U.S. Appl. No. 10/998,289 mailed on Oct. 22, 2007; 4 pages.
Notice of Allowance for U.S. Appl. No. 10/998,289 mailed on Jul. 10, 2007; 8 pages.
Notice of Allowance for U.S. Appl. No. 10/998,289 mailed on Feb. 21, 2007; 9 pages.
Notice of Allowance for U.S. Appl. No. 12/177,752 mailed on Feb. 24, 2010; 13 pages.

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