Edge profile control during patterning of silicon by dry etching

Details Edge profile control during patterning of silicon by dry etching Edge profile control during patterning of silicon by dry etching

1982-07-16

1983-11-29

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21308

Patent

active

044179472

ABSTRACT:
The edge profile of a silicon layer is shaped to have a gradual incline considerably less than 90.degree. by continuously reducing the amount of oxygen mixed with carbon tetrachloride in a reactive ion etching environment. The etching mode varies from complete isotropic etching when the amount of oxygen is maximum, to complete anisotropic etching when the oxygen content is zero.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4383885 (1983-05-01), Maydan et al.
Kitcher et al., "Etch Gas . . . Structures", IBM Technical Disclosure Bull., vol. 22, No. 10, (3/1980), p. 4513.
International Publication No. WO81/02947--Oct. 15, 1981.
Paraszczak et al., "Comparison . . . Silicon", J. Vacuum Science Technology, vol. 19, No. 4, (11/81), pp. 1412-1417.
Korman, "Polysilicon . . . -O.sub.2 Plasma", J. Vacuum Science Technology, vol. 20, No. 3, (3/82), pp. 476-479.
Bondur, "CF.sub.4 . . . System", J. of Electrochemical Society, vol. 126, No. 2, (2/79), pp. 226-231.
Schwatz et al., "Competitive . . . Plasma", J. of Electrochemical Society, vol. 126, No. 3, (3/79), pp. 464-469.

Affiliated with

Also associated with

Rating

Edge profile control during patterning of silicon by dry etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Edge profile control during patterning of silicon by dry etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Edge profile control during patterning of silicon by dry etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-606480