Edge illuminated photodiodes

Details Edge illuminated photodiodes Edge illuminated photodiodes

2007-10-09

2007-10-09

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S432000, C257S461000

Reexamination Certificate

active

11383485

ABSTRACT:
This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

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