Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2011-04-26
2011-04-26
Tran, Binh X (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
C216S067000, C216S068000
Reexamination Certificate
active
07932181
ABSTRACT:
A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
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Cooperberg David
Singh Harmeet
Vahedi Vahid
Buchanan & Ingersoll & Rooney PC
Dahimene Mahmoud
Lam Research Corporation
Tran Binh X
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