Edge bead removal inspection by reflectometry

Optics: measuring and testing – By polarized light examination – Of surface reflection

Reexamination Certificate

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Reexamination Certificate

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07142300

ABSTRACT:
A method and apparatus for enhancing image contrast between resist-covered and bare silicon regions of a wafer, applicable to Edge Bead Removal inspection. The wafer is illuminated separately by s-polarized light and p-polarized light impinging at near the Brewster angle of silicon or resist, and an image difference between the reflected s-polarized light and the reflected p-polarized light is derived.

REFERENCES:
patent: 5917588 (1999-06-01), Addiego
patent: 6268919 (2001-07-01), Meeks et al.

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