ECR plasma reaction apparatus having uniform magnetic field grad

Details ECR plasma reaction apparatus having uniform magnetic field grad ECR plasma reaction apparatus having uniform magnetic field grad

1992-05-19

1994-03-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

18723MR, 18723MA, H01L 2100

Patent

active

052923959

ABSTRACT:
A plasma reaction apparatus has main and auxiliary magnetic field generating coils for generating a magnetic field which has a gradient of no more than 50 gauss/cm in the axial direction and a difference between the axial magnetic field gradient and the magnetic field gradient ten centimeters from the axis of no more than 10 gauss/cm for processing a semiconductor substrate. The plasma reaction apparatus is able to generate a high density, uniform plasma so that the semiconductor substrate is uniformly processed at high speed.

REFERENCES:
patent: 4438368 (1984-03-01), Abe et al.
patent: 4877509 (1989-10-01), Ogawa et al.
patent: 4952273 (1990-08-01), Popov
patent: 4982138 (1991-01-01), Fujiwara et al.
Fujiwara et al, "High Performance Electron Cyclotron Resonance Plasma Etching With Control Of Magnetic Field Gradient", Japanese Journal of Applied Physics, vol. 30, No. 11B, Nov. 1991, pp. 3142-3146.
Samukawa et al, "Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline silicon", Applied Physics Letters, vol. 57, No. 4, Jul. 1990.

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