Echo clock on memory system having wait information

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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C365S191000, C365S233100

Reexamination Certificate

active

06996016

ABSTRACT:
A method and a circuit configuration for implementing a double data rate feature in a memory device capable of operating in a variable latency mode. The memory device may utilize a WAIT_DQS signal that combines functionality of a WAIT signal indicating when valid data is present on a data bus in Read cycle and the memory is ready to accept data in Write cycle, and a data strobe (DQS) signal.

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patent: 6681301 (2004-01-01), Mehta et al.
patent: 2004/0022095 (2004-02-01), Lee
patent: 2004/0047227 (2004-03-01), Jakobs
patent: 0 344 886 (1989-12-01), None
PCT International Search Report and Written Opinion dated Jun. 8, 2005.
General DDR SDRAM Functionality,Micron Technical Note TN 46-05, Micron Technology, Inc., Jul. 2001, pp. 1-11.
KDM432D2131—64 Mbit DDR SGRAM, 512K×32Bit×4 Banks, Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe,Samsung Electronics Target Specification, Revision 0.3, May 1999, pp. 1-49.
C. H. Kim et al.,A 64-Mbit, 640-MByte/s Bidirectional Data Strobed, Double-Data-Rate SDRAM with a 40-mW DLL for a 256-Mbyte Memory System,IEEE Journal of Solid-State Circuits, vol. 33, No. 11, pp. 1703-1709, Nov. 1998.

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