EBR shape of spin-on low-k material providing good film...

Details EBR shape of spin-on low-k material providing good film... EBR shape of spin-on low-k material providing good film...

2007-02-13

2007-02-13

Tran, Thien F. (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000

Reexamination Certificate

active

10753826

ABSTRACT:
In accordance with the objectives of the invention a new method is provided to tune the Edge Bead Remove hump and to further prevent a pointed or tip shaped Edge Bead Remove edge, thus preventing peeling of the low-k dielectric film after the process of Chemical Mechanical Polishing of the low-k film.

REFERENCES:
patent: 5783382 (1998-07-01), Aoyama et al.
patent: 5879577 (1999-03-01), Weng et al.
patent: 6080641 (2000-06-01), Nihonmatsu et al.
patent: 6114747 (2000-09-01), Wei et al.
patent: 2004/0041143 (2004-03-01), Kim et al.

Affiliated with

Also associated with

Rating

EBR shape of spin-on low-k material providing good film... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EBR shape of spin-on low-k material providing good film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EBR shape of spin-on low-k material providing good film... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3877683