Early read after write operation memory device, system and...

Static information storage and retrieval – Interconnection arrangements

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189040, C365S220000, C365S230030, C365S230060

Reexamination Certificate

active

10353405

ABSTRACT:
A memory device, system and method for allowing an early read operation after one or more write operations is provided according to an embodiment. The memory device includes an interface for providing a first write address, a first write data, and a read address. A memory core is coupled to the interface and includes a first memory section having a first data path and a first address path and a second memory section having a second data path and a second address path. In an embodiment of the present invention, the first data and first address path is independent of the second data and second address path. The first write data is provided on the first data path responsive to the first write address being provided on the first address path while a read data is provided on the second data path responsive to the read address being provided on the second address path.

REFERENCES:
patent: 5245572 (1993-09-01), Kosonocky et al.
patent: 5361343 (1994-11-01), Kosonocky et al.
patent: 5748539 (1998-05-01), Sproull et al.
patent: 5778419 (1998-07-01), Hansen et al.
patent: 5893927 (1999-04-01), Hovis
patent: 5893929 (1999-04-01), Shadan et al.
patent: 6018478 (2000-01-01), Higuchi
patent: 6044429 (2000-03-01), Ryan et al.
patent: 6091660 (2000-07-01), Sasaki et al.
patent: 6128728 (2000-10-01), Dowling
patent: 6178132 (2001-01-01), Chen et al.
patent: 6343352 (2002-01-01), Davis et al.
patent: 6640292 (2003-10-01), Barth et al.
patent: 6789175 (2004-09-01), Ryan et al.
patent: 0 833 343 (1998-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Early read after write operation memory device, system and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Early read after write operation memory device, system and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Early read after write operation memory device, system and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3793125

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.