Early detection of contact liner integrity by chemical reaction

Details Early detection of contact liner integrity by chemical reaction Early detection of contact liner integrity by chemical reaction

2006-07-18

2006-07-18

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S153000, C438S637000, C438S672000

Reexamination Certificate

active

07078247

ABSTRACT:
The integrity of a liner in an interconnect structure or other layer in an integrate circuit is tested in a short time by exposing the liner to a reactive gas that attacks the underlying silicon or other material behind the liner. A weak spot in the liner permits the gas to react with the silicon, which produces a visible area that can be readily identified. The test can be performed in a few hours, in contrast to a period of several months required to complete the process, package the circuit and conduct a burn-in test.

REFERENCES:
patent: 4397714 (1983-08-01), Janata et al.
patent: 4799991 (1989-01-01), Dockrey
patent: 4881591 (1989-11-01), Rignall
patent: 5256566 (1993-10-01), Bailey
patent: 6200023 (2001-03-01), Tay et al.
patent: 6278129 (2001-08-01), Sugasawara et al.
patent: 6893953 (2005-05-01), Hoshino et al.
patent: 6905801 (2005-06-01), Liang et al.
patent: 2004/0082142 (2004-04-01), Hansel et al.
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 592-595.

Affiliated with

Also associated with

Rating

Early detection of contact liner integrity by chemical reaction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Early detection of contact liner integrity by chemical reaction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Early detection of contact liner integrity by chemical reaction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3546310