E-beam inspection structure for leakage analysis

Details E-beam inspection structure for leakage analysis E-beam inspection structure for leakage analysis

2011-05-10

2011-05-10

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000, C438S017000, C257S048000

Reexamination Certificate

active

07939348

ABSTRACT:
A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.

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