Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-07-13
2009-11-10
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S226000, C365S129000
Reexamination Certificate
active
07616509
ABSTRACT:
A power supply voltage for a memory on an integrated circuit is dynamically adjusted during the operating of the memory. The operating of the memory includes powering the memory at a supply voltage. A test memory of the integrated circuit is concurrently powered while operating the memory. The test memory and the memory each include bit cells of a first bit cell configuration type. A voltage level of the supply voltage is adjusted, while operating the memory, based on the testing of the test memory. The voltage level is adjusted with external variations to assume a value that guarantees no failed operation of the memory but also accurately minimizes the supply voltage. The system and method may be implemented with any type of memory. The memory and test memory may be physically implemented either separated or interspersed on the integrated circuit.
REFERENCES:
patent: 5774393 (1998-06-01), Kuriyama
patent: 6282135 (2001-08-01), Proebsting
patent: 6327224 (2001-12-01), Braceras et al.
patent: 6529436 (2003-03-01), Brown
patent: 6643204 (2003-11-01), Agrawal
patent: 7079443 (2006-07-01), Takita et al.
patent: 7082068 (2006-07-01), Im et al.
patent: 7170091 (2007-01-01), Lunde
patent: 2005/0078508 (2005-04-01), Chan et al.
patent: 2005/0128790 (2005-06-01), Houston
patent: 2005/0283630 (2005-12-01), Shikata
patent: 2005/0289489 (2005-12-01), Kim et al.
U.S. Appl. No. 11/366,286, filed Mar. 2, 2006.
PCT/US2008/064969 International Search Report and Written Opinion mailed Aug. 21, 2008.
Davar Sushama
Jew Thomas
Qureshi Qadeer A.
Dinh Son
Dolezal David G.
Freescale Semiconductor Inc.
King Robert L.
Nguyen Nam
LandOfFree
Dynamic voltage adjustment for memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic voltage adjustment for memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic voltage adjustment for memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4092797