Dynamic type semiconductor memory device having function of comp

Details Dynamic type semiconductor memory device having function of comp Dynamic type semiconductor memory device having function of comp

1998-09-29

2000-10-10

Nelms, David

Static information storage and retrieval

Read/write circuit

For complementary information

365 51, 365149, 365205, G11C 700

Patent

active

061308455

ABSTRACT:
There is provided a dynamic type semiconductor memory device including (a) a first hierarchized complementary bit line, (b) a second hierarchized complementary bit line, (c) a first sense-amplifier electrically connected to the first bit line, (d) at least one second sense-amplifier electrically connected to both the first bit line and the second bit line, (e) a capacitor located between the first and second bit lines for each of second sense-amplifiers, and (f) a transfer gate arranged in series with the capacity between the first and second bit lines. The above-mentioned dynamic type semiconductor memory device makes it possible to store two-bit data in a single memory cell by employing a memory cell comprised of one transistor and one capacitor, without the use of a conventional memory cell having two transistors and one capacitor. Hence, the dynamic type semiconductor memory device ensures a significant reduction in a chip area.

REFERENCES:
patent: 5353255 (1994-10-01), Komuro
patent: 5430672 (1995-07-01), Kuwabara et al.
patent: 5515315 (1996-05-01), Uda et al.

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