Dynamic threshold voltage mosfet having gate to body connection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257351, 257402, 327328, 327434, H01L 2976

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active

055593682

ABSTRACT:
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. Several efficient connections using through hole plating or polycrystalline silicon gate extension are disclosed. A higher power supply voltage can be used by interconnecting the gate and device body through a smaller MOSFET.

REFERENCES:
patent: 5272432 (1993-12-01), Nguyen et al.
Colinge, Jean-Pierre, An SOI Voltage-Controlled Bipolar-MOS Device, IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 845-849.
Verdonckt-Vandebroek, Sophie, et al., High-Gain Lateral Bipolar Action in a MOSFET Structure, IEEE Trans. on Electron Devices, vol. 38, No. 11, Nov. 1991, pp. 2487-2495.
Parke, Stephen, et al., Bipolar-Fet Hybrid-Mode Operation of Quarter-Micrometer SOI MOSFETS, IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 234-236.
Assaderahi, Fariborz, et al., A Novel Silicon-on-Insulator (SOI MOSFET for Ultra Low Voltage Operation, 1994 IEEE Symposium on Low Power Electronics, Oct. 10-12, San Diego, CA, pp. 58-59.

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