Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-12-25
2007-12-25
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000
Reexamination Certificate
active
11417805
ABSTRACT:
A dynamic sense amplifier for static random access memory (SRAM) is provided. The dynamic sense amplifier includes a pre-amplifier configured to amplify small input signals according to a first clock signal, and a main sense-latch coupled to the pre-amplifier, wherein the main sense-latch is configured to respond to the small input signals according to a second clock signal and a third clock signal, and wherein the dynamic sense amplifier is configured to consume substantially zero direct current power.
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Igor Arsovski, High-Speed Low-Power Sense Amplifier Design, ECE1352—Analog Electronics Reading Assignment, Nov. 12, 2001, pp. 1-14.
Chuang Patrick T.
Huang Mu-Hsiang
Kim Jae-Hyeong
Haverstock & Owens LLP
Le Vu A.
Sony Corporation
Sony Electronics Inc.
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