Dynamic semiconductor wafer processing using homogeneous chemica

Details Dynamic semiconductor wafer processing using homogeneous chemica Dynamic semiconductor wafer processing using homogeneous chemica

1994-12-05

1996-03-19

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566401, 1566621, 156345, 216 73, H01L 2100

Patent

active

055000819

ABSTRACT:
Disclosed is a method for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching with low particle count performance.

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