Dynamic semiconductor memory with improved sense signal

Details Dynamic semiconductor memory with improved sense signal Dynamic semiconductor memory with improved sense signal

1985-05-29

1987-12-22

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Differential sensing

365149, 365205, G11C 1124

Patent

active

047150157

ABSTRACT:
A dynamic semiconductor memory comprising memory cells each including a pair of complementary bit lines, a storage capacitor and a device for selecting that capacitor. The memory further comprises a sense amplifier and a control device, and a greater differential voltage can be obtained from these bit lines by varying the ratio of their floating capacitance. Thus, the conventional requirement for balancing the complementary bit lines is eliminated and the lines can be formed in a multi-layer structure. This contributes significantly to making the memory cell areas smaller.

REFERENCES:
patent: 4506351 (1985-03-01), Scheurlein et al.

Affiliated with

Also associated with

Rating

Dynamic semiconductor memory with improved sense signal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic semiconductor memory with improved sense signal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic semiconductor memory with improved sense signal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-821880