Dynamic semiconductor memory device with higher density bit line

Details Dynamic semiconductor memory device with higher density bit line Dynamic semiconductor memory device with higher density bit line

1996-10-24

1998-05-05

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257907, H01L 27108

Patent

active

057478449

ABSTRACT:
A plurality of bit line contacts provided on one bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL and a plurality of bit line contacts provided on an adjacent bit line BL are arranged on every other one of spaces each provided between every adjacent two of word lines WL which is different from the space in which a corresponding one of the bit line contacts formed on the former bit line is arranged.

REFERENCES:
patent: 5237187 (1993-08-01), Suwanai et al.
patent: 5378906 (1995-01-01), Lee
patent: 5383151 (1995-01-01), Onishi et al.
patent: 5422315 (1995-06-01), Kobayashi
patent: 5578847 (1996-11-01), Aoki et al.
patent: 5610418 (1997-03-01), Eimori
patent: 5614745 (1997-03-01), Motonami

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