Dynamic semiconductor memory device with balanced sensing arrang

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365207, 365208, 365149, 307530, G11C 506

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active

045450374

ABSTRACT:
A dynamic semiconductor memory device of an open bit-line type includes a plurality of first wiring lines running on common opposite electrodes for forming opposite electrodes of memory cell capacitors and connected to the common opposite electrodes at a number of contact points. A second wiring line is connected to the ends of the first wiring lines and to a voltage supply line at the center point of the second wiring line, so that the potential distribution of the common opposite electrodes can be equalized precisely.

REFERENCES:
patent: 4255679 (1981-03-01), White, Jr. et al.
patent: 4259729 (1981-03-01), Tokushige
patent: 4286178 (1981-08-01), Rao et al.
patent: 4419743 (1983-12-01), Taguchi et al.

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