Static information storage and retrieval – Read/write circuit – Testing
Patent
1984-11-20
1988-05-10
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Testing
365230, G11C 2900
Patent
active
047440619
ABSTRACT:
A dynamic semiconductor memory device including memory cells divided into a plurality of blocks (1-1, 1-2). A simultaneous write enable circuit performs a write operation simultaneously upon the plurality of blocks, and a comparison circuit compares read data of one block with read data of the other block, thereby carrying out a test.
REFERENCES:
patent: 4464750 (1984-08-01), Tatematsu
patent: 4541090 (1985-09-01), Shiragasawa
Patent Abstracts of Japan, vol. 7, No. 253, Nov. 10, 1983 & JP-A-58 13 7178.
Patent Abstracts of Japan, vol. 7, No. 23, Jan. 29, 1983 & JP-A14 57 176 587.
Patent Abstracts of Japan, vol. 5, No. 107, Jul. 11, 1981 & JP-A14 56 51 093.
Nakano Masao
Nakano Tomio
Sato Kimiaki
Takemae Yoshihiro
Fujitsu Limited
Moffitt James W.
LandOfFree
Dynamic semiconductor memory device having a simultaneous test f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic semiconductor memory device having a simultaneous test f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic semiconductor memory device having a simultaneous test f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1325647