Dynamic semiconductor memory device for raising voltage level of

Details Dynamic semiconductor memory device for raising voltage level of Dynamic semiconductor memory device for raising voltage level of

1991-09-04

1993-06-22

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

365203, 36523001, G11C 1140

Patent

active

052220427

ABSTRACT:
A dynamic semiconductor memory device capable of boosting a word line of a memory cell array higher than supply voltage, and methods of boosting the level of the word line are disclosed. The dynamic RAM of the present invention includes a RAS (Row Address Strobe) buffer, an address buffer, a write buffer, a word line driving signal generating circuit, a first word line boost circuit and a second word line boost circuit. The word line driving signal generating circuit boosts the word line to the supply voltage in response to a row address strobe signal from the RAS buffer. The first word line boost circuit boosts the word line to be higher than the supply voltage. The second word line boost circuit again boosts the word line in response to a write enable signal from the write buffer. In this manner, unsuccessful writing due to leakage of capacitance can be suppressed.

REFERENCES:
patent: 4649523 (1987-03-01), Holder, Jr. et al.
patent: 4933907 (1990-06-01), Kumanoya et al.
patent: 4953127 (1990-08-01), Nagahashi et al.

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