Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-10-22
1992-12-01
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257303, 257304, 357 51, 357 55, H01L 2968, H01L 2978, H01L 2992, H01L 2906
Patent
active
051683660
ABSTRACT:
In a semiconductor memory device having a memory cell comprising a switching transistor and a storage capacitor, a storage electrode of the capacitor is formed of at least part of a poly-silicon film deposited on an insulating film selectively formed on a silicon substrate, and the transistor comprises a MOS transistor having a channel region formed in a silicon epitaxial layer grown on the silicon substrate simultaneously with the deposition of said poly-silicon film, and has a source region at least part of which is formed in at least part of said poly-silicon film.
REFERENCES:
patent: 4688063 (1987-08-01), Lu et al.
patent: 4803535 (1989-02-01), Taguchi
IEEE Translations on Electron Devices, vol. ED-32, No. 2; Feb. 1985; "Scaling Considerations and Dielectric Breakdown Improvement of a Currugated Capacitor Cell for a Future dRMA"; Sunami et al.; pp. 296 and 297.
Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 73-76 "Submicron MOSFETs with S/D Diffusions on a Field Insulator" Hiroshi Inokawa, et al.
Carroll J.
OKI Electric Industry Co., Ltd.
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