Dynamic semiconductor memory device and method for controllig th

Static information storage and retrieval – Read/write circuit – Simultaneous operations

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523003, 365222, 365203, G11C 1140

Patent

active

049071998

ABSTRACT:
A dynamic semiconductor memory device is divided into a plurality of blocks. An operation of the semiconductor memory device is in either of a normal mode and a refresh mode, depending on the level of a refresh signal. In the normal mode, at an off time period, a potential on a bit line pair is equalized and a precharge potential is applied to the bit line pair. At the access time, equalizing of the potential on the bit line pair and supply of the precharge potential are stopped in a selected block and then, a word line driving signal is raised. On the other hand, in the refresh mode, at the off time period, the potential on the bit line pair is held at "H" and "L" levels by a sense amplifier, so that the potential on the bit line pair is not equalized and the precharge potential is not supplied. On this occasion, a precharge potential generating circuit is electrically disconnected from a power supply. At the time of refresh operation, the sense amplifier is rendered inactive in the selected block, so that the potential on the bit line pair is equalized and then, the word line driving signal is raised.

REFERENCES:
patent: 4725987 (1988-02-01), Cates
patent: 4730279 (1988-03-01), Ohtani
IEEE J. of Sol. St. Circuits: "A 288K CMOS Pseudostatic RAM", by H. Kawamoto et al., vol. SC-19, No. 5, Oct. 1984, pp. 619-623.
IEEE J. Of Sol. St. Circuits: "A Fast 256K.times.4 CMOS Dram with a Distributed Sense and Unique Restore Circuit", by H. Miyamoto et al., vol. SC-22, No. 5, Oct. '87, pp. 861-867.
LSI Res. & Dev. Lab: "A 64Kbit MOS Dynamic RAM with Auto, Self Refresh Functions", by M. Yamada et al., Mitsubishi Electric Corp., pp. 62-69.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic semiconductor memory device and method for controllig th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic semiconductor memory device and method for controllig th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic semiconductor memory device and method for controllig th will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-53688

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.