Dynamic semiconductor memory device

Static information storage and retrieval – Systems using particular element – Capacitors

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365189, G11C 1124

Patent

active

045787760

ABSTRACT:
A dynamic semiconductor memory device includes a one-transistor one-capacitor type dynamic memory cell and a voltage dividing circuit having a potential providing terminal for providing an intermediate potential between the potential of the power supply and ground potential. One electrode of the capacitor in the memory cell is connected to the potential providing terminal. The voltage dividing circuit includes a potential switching circuit which changes the intermediate potential synchronously with an internal clock signal for selecting a word line, thus preventing a read error.

REFERENCES:
patent: 4259729 (1981-03-01), Tokushige
patent: 4458336 (1984-07-01), Takemae
patent: 4477886 (1984-10-01), Au

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