Dynamic semiconductor memory device

Static information storage and retrieval – Read/write circuit – For complementary information

Patent

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Details

365203, 365200, 36518911, G11C 700

Patent

active

060184817

ABSTRACT:
A dynamic semiconductor memory device can suppress an increase in the amount of current in the stand-by state even if the defect of short circuit occurs between a bit line and a word line by using a current limiting element controlled by a column selection line, for limiting the precharge current for the bit line.

REFERENCES:
patent: 5642314 (1997-06-01), Yamauchi
patent: 5673231 (1997-09-01), Furutani
T. Kirihata et al.; IEICE Trans. Electron, vol. E79-C No. 7; "Fault-Tolerant Designs for 256 Mb DRAM"; Jul. 1996; pp. 969-977.

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