Dynamic semiconductor memories

Static information storage and retrieval – Systems using particular element – Capacitors

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365206, G11C 1134

Patent

active

053294793

ABSTRACT:
A dynamic semiconductor memory includes a pair of complementary bit lines with a significant difference in load capacitance, storage capacitors and a pair of transistors for specifying one of the storage capacitors. One end of each storage capacitor is connected to one of the bit lines through one of the transistors and the other end is connected to the other bit line through the other transistor.

REFERENCES:
patent: 4103342 (1978-07-01), Miersch et al.
patent: 4715015 (1987-12-01), Mimoto et al.
patent: 4792922 (1988-12-01), Mimoto et al.
V. L. Rideout et al., "Twin Cell Layout For High Speed Random-Access Memory", IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 1977, pp. 2879-2880.
Miyasaka et al., "Ideas and Progress in Sense Amplifiers-Key to the Design of Large Capacity MOS RAM" Nikkei Electronics, (1979) pp. 110-133.

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