Dynamic random access memory with fully independent partial...

Details Dynamic random access memory with fully independent partial... Dynamic random access memory with fully independent partial...

2006-04-28

2009-02-17

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S189050

Reexamination Certificate

active

07492656

ABSTRACT:
A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.

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Micron Technology, Inc.,; Mobile SDRAM, 256Mb: x32 Mobile SDRAM, 2003, pp. 1-75.

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