Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-03-29
2011-03-29
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189050, C365S189120
Reexamination Certificate
active
07916569
ABSTRACT:
A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.
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Kim Jin-Ki
Oh HakJune
Dinh Son
Mosaid Technologies Incorporated
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