Dynamic random access memory using silicon-on-insulator techniqu

Details Dynamic random access memory using silicon-on-insulator techniqu Dynamic random access memory using silicon-on-insulator techniqu

1995-05-11

1999-10-19

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437203, 437919, H01L 218242

Patent

active

059688408

ABSTRACT:
The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating layer by isolation of electrical elements in order to divide an active region and a passive region; forming and patterning a first conductive layer through a contact to which the active region and a capacitor are connected on the insulating layer to form a storage node; forming a dielectric layer of the capacitor on the storage node; forming and patterning a polysilicon layer on the dielectric layer to form a storage node; forming a second insulating layer on the plate node and planarizing the insulating layer by thermal treatment; forming a third conductive layer to a predetermined thickness on the planarized insulating layer; polishing and planarizing the third conductive layer by chemical-mechanical polishing technique, using the second insulating layer as an etchstopper and bonding a second silicon substrate on the planarized third conductive layer; planarizing a backside of the first substrate by a chemical-mechanical polishing technique and exposing the active region; and forming a switching element on the forming a bit line.

REFERENCES:
patent: 4992135 (1991-02-01), Doan
patent: 5414655 (1995-05-01), Ozaki et al.

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