Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-13
2008-11-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21637, C257S329000, C438S268000
Reexamination Certificate
active
07456458
ABSTRACT:
A dynamic random access memory structure having a vertical floating body cell includes a semiconductor substrate having a plurality of cylindrical pillars, an upper conductive region positioned on a top portion of the cylindrical pillar, a body positioned below the upper conductive portion in the cylindrical pillar, a bottom conductive portion positioned below the body in the cylindrical pillar, a gate oxide layer surrounding the sidewall of the cylindrical pillar and a gate structure surrounding the gate oxide layer. The upper conductive region serves as a drain electrode, the bottom conductive region serves as a source electrode and the body can store carriers such as holes. Preferably, the dynamic random access memory structure further comprises a conductive layer positioned on the surface of the semiconductor substrate to electrically connect the bottom conductive regions in the cylindrical pillars.
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Budd Paul A
Jackson Jerome
Oliff & Berridg,e PLC
Promos Technologies Inc.
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