Dynamic random access memory including read preamplifiers activa

Details Dynamic random access memory including read preamplifiers activa Dynamic random access memory including read preamplifiers activa

1995-02-21

1996-12-24

Gossage, Glenn

Static information storage and retrieval

Read/write circuit

Differential sensing

365190, 365233, G11C 11409, G11C 706

Patent

active

055879527

ABSTRACT:
A dynamic random access memory is provided which includes word lines for accessing memory cells, data lines for transferring information from the memory cells, and rewrite amplifiers connected to the data lines for rewriting the information to corresponding memory cells. Read pre-amplifiers are also provided for sensing the information, together with common data lines for transferring output signals of the read pre-amplifiers. Each of the read pre-amplifiers has two insulated gate field-effect transistors, gates of which are connected to the data lines, and sources/drains of which are connected with the common data lines, such that the common data lines do not form current paths with the data lines. In addition, the read pre-amplifiers are activated before the rewrite amplifiers.

REFERENCES:
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Baba et al, "A 64k DRAM wtih 35ns Static Column Operation," IEEE Jour. of Sol. St. Lcts., vol. SC-18, No. 5, Sep. 1983, pp. 447-451.

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