Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1988-03-02
1989-11-07
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Capacitors
365182, 365226, 357 231, 307 15, 3072966, G11C 1124, G11C 1134, H01L 2978, H03K 301
Patent
active
048796794
ABSTRACT:
A dynamic RAM provided on a semiconductor substrate comprises: a memory cell including a capacitor for storing electric charges as information, the capacitor having a storage gate electrode to which a potential other than a ground potential is applied during normal operation of the dynamic RAM; a peripheral circuit including a CMOS circuit; and grounding means for applying the ground potential to the storage gate electrode only in a predetermined period immediately after a start of application of a power supply voltage to the dynamic RAM.
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patent: 4641165 (1987-02-01), Tizuka et al.
patent: 4672584 (1987-06-01), Tsuji et al.
patent: 4691304 (1987-09-01), Hori et al.
patent: 4791610 (1988-12-01), Takemae
patent: 4798974 (1989-01-01), Reczek et al.
IEDM 85: "Static and Transient Latch-up Hardness in N-Well CMOS With On-Chip Substrate Bias Generator", by D. Takacs et al., 18.5, 1985, pp. 504-508.
Kikuda Shigeru
Miyamoto Hiroshi
Hecker Stuart N.
Koval Melissa J.
Mitsubishi Denki & Kabushiki Kaisha
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