Dynamic random access memory having no capacitor and method for

Details Dynamic random access memory having no capacitor and method for Dynamic random access memory having no capacitor and method for

1996-09-05

1998-08-25

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Capacitors

G11C 700

Patent

active

057989656

ABSTRACT:
A capacitor-less dynamic random access memory (DRAM) having a unit cell includes a first transistor receiving data through a source electrode connected to a bit line according to a signal level applied to a gate electrode, and a second transistor storing charges corresponding to data input to the first transistor and outputting a reference voltage to the bit line according to the level of the charges. This improves the reliability and integration of the device.

REFERENCES:
patent: 3771148 (1973-11-01), Aneshamsley
patent: 4716548 (1987-12-01), Mochizuki
patent: 5122986 (1992-06-01), Lim
patent: 5282162 (1994-01-01), Ochii
patent: 5448513 (1995-09-01), Hu et al.
"A Capacitorless DRAM Cell on SOI Substrate", Wann et al., IEDM 93, pp. 635-638, 1993.

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