Dynamic random access memory having improved word line control

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

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365204, 36523006, G11C 700, G11C 800

Patent

active

051193345

ABSTRACT:
A dynamic random access memory including a memory cell array, an address supply part, a data input/output part and a word line driver. The word line driver increases word lines to a first voltage during a first predetermined period after a first timing when the address supply circuit selects one of the word lines for reading out data and a second predetermined period after a second timing when the address supply circuit releases the one of the word lines from a selected state and maintains the one of the word lines at a second voltage less than the first voltage during an interval between the first and second predetermined periods.

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