Dynamic random access memory having dummy word line for facilita

Static information storage and retrieval – Read/write circuit – Differential sensing

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365194, 365233, G11C 700, G11C 800

Patent

active

049891820

ABSTRACT:
A dynamic random access memory includes a dummy word line which has an electrical characteristic identical to that of an actual word line. The dummy word line is charged up and is then discharged as in case of the actual word line. A latched row address in a row address latch circuit is reset when the potential of the dummy word line becomes equal to a predetermined low potential due to the discharge operation for the dummy word line.

REFERENCES:
patent: 4338678 (1982-07-01), Akatsuka
patent: 4556961 (1985-12-01), Iwahashi et al.
patent: 4599525 (1986-07-01), Tzeng
patent: 4644501 (1987-02-01), Nagasawa
patent: 4680735 (1987-07-01), Miyamoto et al.
patent: 4710902 (1987-12-01), Pelley, III et al.
Prince, B., "Semiconductor Memories", Wiley, N.Y., 1983, p. 43.

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