Dynamic random access memory having a vertical transistor

Details Dynamic random access memory having a vertical transistor Dynamic random access memory having a vertical transistor

1994-06-30

1996-04-02

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257302, 257330, H01L 27108

Patent

active

055043577

ABSTRACT:
A DRAM having a vertical transistor of a highly integrated semiconductor device and its manufacturing method are disclosed. A DRAM has a silicon substrate, a word line formed in a silicon substrate, a gate oxide layer formed on the side wall of the word line, a bit line junction region formed on the bottom of a silicon substrate, a bit line that is connected to the a bit line junction region and is insulated from the word line via a first insulating layer, a charge storage electrode junction region formed near the bottom of silicon substrate surface, a pad polysilicon layer that is insulated from the a word line via a second insulating layer and is connected at the top of a charge storage electrode diffusion region, and a charge storage electrode that is connected to the pad polysilicon layer through a contact. Accordingly, a channel region is formed on a silicon substrate positioned on the side wall of a word line by applying the voltage to the word line and thus a signal transmitter is mutually transferred from the bit line to the charge storage electrode.

REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.
patent: 5307310 (1994-04-01), Narita

Affiliated with

Also associated with

Rating

Dynamic random access memory having a vertical transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory having a vertical transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory having a vertical transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2018342