Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With window means
Patent
1993-10-26
1997-08-26
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With window means
257308, 257 71, 257 68, 438253, 438254, 438739, H01L 2302, H01L 21265
Patent
active
056613407
ABSTRACT:
A method for fabricating a dynamic random access memory comprises the steps of forming a diffusion region in a semiconductor substrate, providing an insulation layer on the semiconductor substrate, forming a contact hole in the insulation layer to expose the diffusion region at the contact hole, depositing a semiconductor layer on the insulation layer in the amorphous state such that the semiconductor layer establishes an intimate contact with the exposed diffusion region via the contact hole, patterning the semiconductor layer to form a capacitor electrode, depositing a dielectric film on the capacitor electrode such that said dielectric film covers the capacitor electrode; and depositing a semiconductor material to form an opposing electrode such that the opposing electrode buries the capacitor electrode underneath while establishing an intimate contact with the dielectric film that covers the capacitor electrode.
REFERENCES:
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5223729 (1993-06-01), Kudoh et al.
Patent Abstracts of Japan, vol. 12, No. 207 (E-621)[3054] Jun. 14, 1988 & JP-A-63 004670 (Hitachi) Jan. 9, 1988.
Patent Abstracts of Japan, vol. 13, No. 304 (E-786) Jul. 12, 1989 & JP-A-1 081227 (Hitachi) Mar. 27, 1989.
Patent Abstracts of Japan, vol. 13, No. 531 (E-851)[3879] Nov. 28, 1989 & JP-A-1 217956 (Fujitsu) Aug. 31, 1989.
Hayashide et al., "Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode," Japanese Journal of Applied Physics, Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai, 1990, pp. 869-872.
Watanabe et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes," Japanese Journal of Applied Physics, Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai, 1990, pp. 873-876.
Novak et al., "The Dry Etching of Oxides Using Anhydrous HF," Japanese Journal of Applied Physics, Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai, 1990, pp. 1091-1093.
Ema Taiji
Higashitani Masaaki
Ikeda Toshimi
Katayama Masaya
Kawano Michiari
Fujitsu Limited
Wojciechowicz Edward
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