Dynamic random access memory having a gain function

Details Dynamic random access memory having a gain function Dynamic random access memory having a gain function

1987-03-27

1989-02-07

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365189, G11C 702

Patent

active

048036641

ABSTRACT:
Integration of a dynamic random access memory having a very high integration is further improved according to the invention. A memory structure is disclosed wherein a three transistor type memory cell is used instead of a conventional lT-lC memory cell, and data read and write terminals are connected to a pair of data lines in such a manner that the electrical characteristics of the pair of data lines are balanced. A three transistor type memory cell is realized which is capable of operating at high speed and with high reliability.

REFERENCES:
patent: 4491858 (1985-01-01), Kawamoto
J. A. Karp et al., "A 4096-Bit Dynamic MOS RAM", Digest of Technical Papers, pp. 10-11, 1972, IEEE International Solid-State Circuits Conference.
K. Shimohigashi et al., "Design of a 3-Transistor, 2.5 Line Per-Bit Dynamic MOS RAM", Institute of Electronics and Communication Engineers of Japan, Jun. 1975, vol. 58-C, No. 6, pp. 327-334.

Affiliated with

Also associated with

Rating

Dynamic random access memory having a gain function does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory having a gain function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory having a gain function will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1089268