Dynamic random access memory (DRAM) for suppressing a...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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Details

C365S196000, C365S203000, C365S227000, C714S710000, C714S711000

Reexamination Certificate

active

07663948

ABSTRACT:
A semiconductor memory device which has a normal memory cell array and a redundant memory cell array for replacing a failure bit in the normal memory cell array, having: a memory cell array having a plurality of word lines, a plurality of bit line pairs crossing the word lines, and a plurality of memory cells placed at the crossing positions; and a plurality of sense amplifier circuits which are placed between adjacent memory cell arrays and are shared by bit line pairs of memory cell arrays on both sides. And a current interrupting circuit for disconnecting the sense amplifier and the bit line pairs in a column having a failure is formed respectively between the sense amplifier circuit and the bit line pairs on both sides. By this current interrupting circuit, short-circuit current from the sense amplifier circuit to the shorted area can be suppressed.

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patent: 5896334 (1999-04-01), Casper et al.
patent: 6144599 (2000-11-01), Akita et al.
patent: 6850454 (2005-02-01), Kuge et al.
patent: 7492648 (2009-02-01), Sturm et al.
patent: 4-342000 (1992-11-01), None
patent: 9-69300 (1997-03-01), None
patent: 11-149793 (1999-06-01), None

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