Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-07-12
2011-07-12
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S243000, C438S386000, C257SE21561, C257SE21646
Reexamination Certificate
active
07977172
ABSTRACT:
A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.
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Cho Hyun-jin
Dhong Sang H.
Goo Jung-Suk
Mandal Gurupada
Advanced Micro Devices , Inc.
Booth Richard A.
Ingrassia Fisher & Lorenz P.C.
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