Dynamic random access memory device with trench type memory cell

Details Dynamic random access memory device with trench type memory cell Dynamic random access memory device with trench type memory cell

1991-06-27

1992-12-01

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257302, H01L 2968

Patent

active

051683369

ABSTRACT:
A dynamic random access memory cell comprises a switching transistor and a storage capacitor formed in a relatively deep trench and having a capacitor electrode projecting over the major surface of the semiconductor substrate, wherein the switching transistor comprises a source/drain region formed along a wall portion defining the relatively deep trench, another source/drain region formed in the major surface portion, a channel region extending partially along a wall portion defining a relatively shallow trench and partially beneath the major surface so that a channel length is prolonged, thereby decreasing an occupation area without any punch-through phenomenon.

REFERENCES:
patent: 4408304 (1983-10-01), Nashizawa
patent: 4897700 (1990-01-01), Nakamura
patent: 5027172 (1991-06-01), Jeon

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