Dynamic random access memory device with redundant word lines sh

Details Dynamic random access memory device with redundant word lines sh Dynamic random access memory device with redundant word lines sh

1993-11-26

1994-11-01

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Bad bit

36523006, 371 101, G11C 700, G11C 1300

Patent

active

053612310

ABSTRACT:
A dynamic random access memory device has a plurality of sense amplifier circuits shared between two regular memory cell arrays respectively associated with redundant memory cell arrays, and two transfer gate arrays are coupled between one of the regular memory cell arrays and one of the redundant memory cell arrays as well as between the other regular memory cell array and the other redundant memory cell array so that a large number of defective memory cells are replaceable with both of the redundant memory cell arrays, thereby improving production yield.

REFERENCES:
patent: 5008857 (1991-04-01), Mizoguchi

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